BAS56 All information provided in this document is subject to legal disclaimers. ? NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 3 — 29 June 2010 6 of 12
NXP Semiconductors
BAS56
High-speed double diode
8. Test information
(1) Single diode loaded
(2) Double diode loaded
Fig 5. Forward current as a function of
ambient temperature; derating curves
mbg439
0
0 100
(1)
(2)
200
300
200
100
Tamb
(
°C)
IF
(mA)
(1) IR
=40mA
Fig 6. Reverse recovery time test circuit and waveforms
Input signal: pulse duration tp
= 300 ns; duty cycle δ
= 0.01.
Fig 7. Forward recovery voltage test circuit and waveforms
trr
(1)
+
I
F
t
output signal
tr
tp
t
10 %
90 %
VR
input signal
V = VR +
IF ×
RS
RS = 50 Ω
IF
D.U.T.
Ri
= 50
Ω
SAMPLING
OSCILLOSCOPE
mga881
tr
t
tp
10 %
90 %
I
input signal
RS
= 50
Ω
I
Ri
= 50
Ω
OSCILLOSCOPE
1 kΩ
450 Ω
D.U.T.
mga882
VFR
t
output signal
V
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